Course Syllabus
Engineering Materials
Types of materials - Metal and Alloys, Polymer, Ceramic, Composite and Electronic materials.
Types of solids - Amorphous, single crystal, polycrystalline.
Space lattices/crystal structures of solids - unit cell, Space lattice, Crystal systems and Bravais lattices, basic lattice
types, crystal planes and Miller indices, crystal structure analysis .
Atomic bonding - Ionic, covalent, metallic.
Imperfections and impurities in solids - Vacancy defect and interstitial defect.
Growth of semiconductor materials - Czochralski method, epitaxial growth.
Semiconductor Fundamentals
Homogeneous semiconductor - Semiconductor models, Band structure of semiconductor, Intrinsic and extrinsic
semiconductor, Density of state and Fermi functions, Carrier distribution, non-degenerate and degenerate semiconductor.
Current flow in Semiconductor - Drift, Diffusion, recombination and generation, optical processes, Minority carrier lifetime
and diffusion length, Quasi Fermi levels.
Non-homogeneous semiconductor - constancy of fermi levels, graded doping.
Junction Devices
P-N junction - Basic structure, electrostatics, zero applied bias, non-zero applied bias.
P-N junction diode - device operation, I-V characteristics, small-signal model, recombination & generation current,
breakdown.
Bipolar Junction Transistor.
Bipolar transistor action, performance parameters, non-ideal effects, equivalent circuit models.
Field Effect Devices
MOS fundamentals - 2-terminal MOS structure, I-V characteristics.
MOSFET operation, small-signal model, non-ideal effects.
Types of materials - Metal and Alloys, Polymer, Ceramic, Composite and Electronic materials.
Types of solids - Amorphous, single crystal, polycrystalline.
Space lattices/crystal structures of solids - unit cell, Space lattice, Crystal systems and Bravais lattices, basic lattice
types, crystal planes and Miller indices, crystal structure analysis .
Atomic bonding - Ionic, covalent, metallic.
Imperfections and impurities in solids - Vacancy defect and interstitial defect.
Growth of semiconductor materials - Czochralski method, epitaxial growth.
Semiconductor Fundamentals
Homogeneous semiconductor - Semiconductor models, Band structure of semiconductor, Intrinsic and extrinsic
semiconductor, Density of state and Fermi functions, Carrier distribution, non-degenerate and degenerate semiconductor.
Current flow in Semiconductor - Drift, Diffusion, recombination and generation, optical processes, Minority carrier lifetime
and diffusion length, Quasi Fermi levels.
Non-homogeneous semiconductor - constancy of fermi levels, graded doping.
Junction Devices
P-N junction - Basic structure, electrostatics, zero applied bias, non-zero applied bias.
P-N junction diode - device operation, I-V characteristics, small-signal model, recombination & generation current,
breakdown.
Bipolar Junction Transistor.
Bipolar transistor action, performance parameters, non-ideal effects, equivalent circuit models.
Field Effect Devices
MOS fundamentals - 2-terminal MOS structure, I-V characteristics.
MOSFET operation, small-signal model, non-ideal effects.
Frequently Asked Questions
Q1 : Does this course involve theory and calculation regarding semiconductor?
A1 : Yes. This course involves theory regarding the material and fundamental of semiconductor devices. On top of that, calculation regarding the semiconductor devices will also be introduced.
Q2 : What is the passing mark for this course?
A2 : 50%
A1 : Yes. This course involves theory regarding the material and fundamental of semiconductor devices. On top of that, calculation regarding the semiconductor devices will also be introduced.
Q2 : What is the passing mark for this course?
A2 : 50%